| PART |
Description |
Maker |
| BS250 |
DMOS Transistors (P-Channel)
DMOS Transistor (P-Channel)
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| FDPF10N60NZ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Fairchild Semiconductor
|
| STN9926 |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| 2N7002 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N-channel MOSFET
|
Zetex Semiconductors
|
| DN3135NW |
N-Channel Depletion-Mode Vertical DMOS FETs N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| VN0550N3-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 50 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
| TP2435 TP2435N8 TP2435NW |
P-Channel Enhancement-Mode Vertical DMOS FETs 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex Inc
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| 2N7000-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
|
